价带顶和导带底附近的带间跃迁振子强度大部分都近乎为零；
Most optical oscillator strengths for the transitions between valence band and conduction band are nearly equal to zero.
讨论窄禁带半导体带间光吸收跃迁的理论和实验。
The theoretical and experimental aspects of inter-band optical transitions are discussed for narrow gap semiconductors.
本文主要论述窄禁带半导体碲镉汞的带间光吸收跃迁的理论和实验。
This paper reviews the research progress in both theoretical and experimental aspects of band-to-band optical absorption transition effect in narrow gap semiconductor HgCdTe.
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