由本方法形成的层间电介质膜具有低介电常数并显示出优良的机械特性。
The interlayer dielectric film formed by the method has a low dielectric constant and shows superior mechanical properties.
此处公开了一种使用多面体分子倍半硅氧烷形成半导体器件所用的层间电介质膜的方法。
Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane.
层间电介质、自组装单分子层、在该单分子层上的催化颗粒、以及在具有催化颗粒的单分子层上的铜层。
The copper line includes an interlayer dielectric, a self-assembled monolayer, catalytic particles on the monolayer, and a copper layer on the monolayer with the catalytic particles.
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