计算了二维无序系统的电子态密度、迁移率边界、局域化临界点以及直流电导率。

The local density of states (LDOS), the mobility edge, the localization critical value and the DE conductivity for two-dimensional disorder systems are calculated.

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发现在高电子密度下电子会向量子限制较弱的退局域态转移。同时还经由热电子隧穿而跃迁到表面态。

It is found that the electrons may be transferred into delocalized states with high energy and transited to surface states through hot electron tunneling under high electron concentration.

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