提出一种求解异质结双极晶体管(HBT)小信号等效电路模型的解析方法。

This paper discussed an analytical method for determining the heterojunction bipolar transistors (HBTs) equivalent circuit model.

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在A1210 - A 1214霍尔效应锁存包括一个单一的硅芯片上以下内容：稳压器，霍尔电压发生器，小信号放大器，施密特触发器和NMOS输出晶体管。

The A1210-A1214 Hall-effect latches include the following on a single silicon chip: voltage regulator, Hall-voltage generator, small-signal amplifier, Schmitt trigger, and NMOS output transistor.

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