为减少射频螺旋电感的金属导体损耗，提出了一种电感金属线宽及金属间距从外到内逐渐变小的新颖结构。

To decrease the metal losses of RF spiral inductor, a novel layout structure with gradually reduced metal line width and space from outside to inside is presented.

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平面螺旋电感是射频电路设计中最重要的无源元件。

Planar spiral inductor is the most important passive component of CMOS RF integrated circuit design.

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本文围绕射频集成电路中应用的无源硅基片上螺旋电感和有源器件砷化镓高电子迁移率晶体管进行了相关的研究，得到了一些新的结果和新的建模方法。

This paper focuses on the modeling of the passive silicon-chip spiral inductors and active GaAs HEMT, and obtains some new results and new modeling method.

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