通过实验研究了闪速存储器存储单元中应力诱生漏电流(ILC)产生机理。
The generation mechanism of stress induced leakage current (SILC) in flash memory cell is studied by experiments.
还有一个挑战将是创造出一个有数百万而不是只有一个存储单元的电子存储器。
The next challenge will be to create an electronic memory that has millions of cells instead of just one.
如果一个存储单元能存放一个字节，则一个64kb的存储器共有存储单元数为B。
If a storage unit can store a byte, 64kb of memory is a Shared storage unit number for b.
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