包括锗硅单层、多层结构的外延生长、以及金属诱导生长多晶锗硅和肖特基二极管原型器件的制备。

The research focused on the growth of SiGe single layer, multi-layers, metal induced growth of poly-SiGe, Schottky barrier diodes (SBDs) were fabricated.

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NMOS晶体管(A)的门电极(16)在n -型掺杂的不含锗的多晶硅层(14)上形成。

The gate electrodes (16) of the NMOS transistors (a) are formed in a layer of n-type doped polycrystalline silicon (14) without germanium.

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