梦幻输出，垂直场效应管FET功放，这个是第一个全FET功率放大器。
The dream output element, the vertical power FET, was used for the first time in this all-FET power amplifier.
因增益与带漏电流和功耗成比例，一个最小漏电流会在MOS场效应管振荡放大器元件能够提供适当的增益用于振荡的时候出现。
Thus, since gain scales with drain current and power dissipation, a minimum drain current exists at which a MOSFET oscillator amplifier element supplies adequate gain for oscillation.
实验与分析表明，高压直流放大器采用功率场效应管和电压闭环控制后，可拓展放大器通频带，提高放大器输出能力和长时间稳定性。
The experimental and analytical results demonstrate that wide bandwidth, high voltage output and long-time stability can be achieved with power MOSFETs and a closed-loop scheme.
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