高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
神经芯片技术是一种将神经元或脑组织与场效应晶体管技术结合起来研究神经元电活动和大脑学习记忆等高级功能的新技术。
Neurochip is a new technology of studying the electrical activities of nerve cells and advanced functions of brain, such as learning and memory by combining with field-effect transistor technique.
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