当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
由于金属杂质原子扩散并沉积在器件的有源区，会造成诸如：反向漏电流较大，反向击穿电压是软击穿等有害的影响。
High leakage currents and soft reverse current-voltage characteristics are some of the detrimental effects produced by the metal atoms dissolved in the silicon matrix.
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