制备了含两层绝缘层的双势垒结构隧道发光结，介绍了其结构特点，分析了电子在结中的共振隧穿特性。
The double-barrier light emission tunnel junctions have been fabricated. The characteristics of electronic resonant tunneling with the junctions have been analyzed.
讨论了硅基双势垒金属绝缘层金属绝缘层半导体 （MIMIS）隧道发光结的结构、制备方法及发光特性。
The structure, fabrication technology and light emission properties of double barrier MIMIS tunneling junction are discussed.
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