铜单晶线材中位错蚀坑密度与材料浸蚀时间，变形量以及晶体学取向有关。
The dislocation etch pits density(EPD) of copper single wires is related with corroded time, deformative extent and crystal orientation of material.
单晶铝线材在变形和加热后会产生大量的位错胞、高密度位错和明显的回复再结晶现象。
After deformation and heat treatment, single crystal al wire will generate a mass of dislocation cells, high density dislocations and evident recovery phenomena.
单晶铝线材在服役过程中组织性能的变化，必然使信号传输质量受到影响。
The changes of structures and properties of single crystal al wire, which is in the course of service, influence the quality of signal transportation inevitably.
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