分析了W - CMP的机理，抛光液对W材料表面具有化学腐蚀和机械研磨的双重作用，对抛光速率有着重要的影响。

The mechanism of W-CMP was analyzed, the slurry makes a dual function of chemical erosion and mechanical lapping, has an important influence on the polishing rate.

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结果表明，黄铜的化学抛光包括浸蚀、光亮和过腐蚀三个阶段，同时对黄铜化学抛光机理也进行了探讨。

Experimental results show that the polishing process includes the steps of etching, brightening and over-etching. The mechanism are also discussed.

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结果表明经过化学机械抛光随后再经腐蚀后的蓝宝石衬底的表面性能最好。

The results show that the surface properties of it with CMP, and then chemically etching are best.

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