刻蚀速率是指在刻蚀过程中去除硅片表面材料的速度，如图1所示，通常用Å /min表示。
Pore size and porosity of nanoporous GaN increase with applied voltage increasing for the same Si-doped GaN, and pore density and etch rate increase first, and decrease when applied voltage is larger than a certain value.
同一硅掺杂浓度的n-GaN,多孔GaN材料的孔尺寸和孔洞率随外加偏压的增加而增大,多孔GaN材料的孔密度和刻蚀速率随外加偏压是先增大,当达到某一值后开始下降。
参考来源 - Ⅲ·2,447,543篇论文数据，部分数据来源于NoteExpress
剂中的材料都具有一定的刻蚀速率。
More often , all of the materials etchant have a finite etch rate.
通过调整工艺条件，可严格控制刻蚀速率。
The etching rate can be strictly controlled by adjusting technological conditions.
再继续增加射频功率、压力，刻蚀速率反而会下降。
If the RF power, pressure are continued to increase, the etching rate decrease.
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