针对刻蚀率随入射能量增加而下降的问题，详细研究了刻蚀羽辉在刻蚀过程中的影响；
It is found that etching rate decreases with increasing incident fluences, so the influence of plume in the etching process is studied.
本发明减小了后续刻蚀过程中在半导体器件上产生缺陷的威胁，提高了半导体器件的质量。
The invention reduces the threat of generating defects on a semiconductor device in the subsequent etching process and improves the quality of the semiconductor device.
传统的干法刻蚀不适合用于注入层，因为它的工艺复杂而且在刻蚀过程中可能导致基片损坏。
The feasibility of using traditional dry-etch BARCs is very questionable because they introduce more process complexity and more defectivity and potentially cause unnecessary substrate damage.
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