该薄膜在近紫外及可见光范围内具有良好的光敏特性，其灵敏度和光电导增益较高，并且具有较好的线性光照特性。

The film has good photobehavior in the range from near ultraviolet to visible light, and it has high photosensitivity, high photoconductive gain and high linear illumination performance.

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利用椭圆偏振光谱、反射谱、红外吸收谱和准稳态光电导（QSSPC）分析了氮化硅薄膜的特性。

The characterization of SiN thin films was studied by spectral ellipsometry, reflection spectra, infrared absorption spectroscopy (IR) and quasi-steady state photoconductance (QSSPC) measurements.

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应用傅立叶红外仪测量了薄膜的红外谱，用共面蒸铝电极法测量了薄膜的光电导。

We got the infrared spectra by The Fourier Transform Infrared (FTIR) spectroscope and measured the thin films' photoconductivity using Coplanar Aluminum Plating Electrode methods.

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