摘要对比了半绝缘多能谷光电导开关中光激发单极畴和耿氏器件中偶极畴的物理机制。

The photon-activated monopole domain in a semi-insulating multi-valley photoconductive semiconductor switch and the dipole domain in a Gunn device are compared.

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此外，还研究在掺铒光纤激光器中注入光实现波长可开关的光控机制并找到了抑制腔内激发波长的最优注入光波长。

Meanwhile, the effect of optical injection in erbium-doped fiber laser was investigated, and the optimized wavelength to control the lasing wavelength has been found.

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