通过快速低温化学气相沉积 (LTCVD)，本品可用于无定形硅、外延硅和硅基电介质的沉积。2通过分子束外延 (MBE)，与锗的固体原料相结合，还可用于硅锗薄膜的外延生长。
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采用热丝化学气相沉积法(HFCVD)在普通玻璃衬底上低温沉积多晶硅薄膜。
Polycrystalline silicon thin films were prepared by hot-filament chemical vapor deposition (HFCVD) on glass at low-temperatures.
以镍片为基板材料，利用微波等离子体化学气相沉积法在低温条件下合成了纳米碳管膜。
Carbon nanotube films were synthesized on Ni substrate by microwave plasma chemical vapor deposition at low temperature.
等离子增强化学气相沉积(PECVD)是低温沉积硅膜的主要方法。
Plasma enhanced chemical vapor deposition (PECVD) is one of the matured and simple manipulated among the thin film deposition methods at low temperature.
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