为了保证低泄漏电流和低介电吸收，反馈电容器应当由合适的介电材料(如聚苯乙烯、聚丙烯或聚四氟乙烯)制成。

To ensure low leakage current and low dielectric absorption, the feed back capacitor should be made of a suitable dielectric material such as poly styrene, polypropylene, or Teflon.

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工艺和性能模拟分析表明，此结构具有SOI器件低泄漏电流和低输出电容的特性，而且能抑制自加热效应和浮体效应。

The novel LDMOSFET did not degrade the advantage of SOI structure's low leakage current and parasitic capacitance, which also suppressed the self-heating effects and floating body effects.

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由于流过齐纳二极管的泄漏电流会在电阻器上产生电压降，所以希望使用低漏电的齐纳二极管。

Since the leakage current through the zener diodes results in a voltage drop across the resistor, low leakage zener devices are desirable.

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