低内阻的原理也同样适用于毫安表。

The same principles of low internal resistance also apply to milliammeters.

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低内阻原理也同样适用于毫安表。

The same principle of low internal resistance also apply to milliammeters.

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针对器件低内阻下的高灵敏度这一器件特性上的难题，在砷化镓霍尔传感器设计中采用非对称十字形结构。

To resolve the problem of high sensitivity of the element of low inner resistance, we design the unsymmetric cross structure for the GaAs Hall sensor.

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