本文提出一个非均匀掺杂、短沟道MOSFET阈电压的准二维解析模型。
A quasi-two dimentional analytical model of threshold voltage for non-uniform doped short channel MOSFET is presented in this paper.
利用解析方法计算了空芯线圈的阻抗，然后通过二维有限元模型进行了阻抗求解，对比结果有较好的一致性。
The impedance of single coil is calculated using analytic method, and the result is compared with that calculated by 2d FEM model.
分别用二维场—路耦合法和解析法建立了磁悬浮力模型。
A model of magnetic suspension forces is built by using 2d field-circuit coupling and analytical methods.
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