在编程此反熔丝一次可编程非易失存储器单元后，已编程的区域(例如为连结)可作为二极管，其形成于反熔丝上。
A programmed region, i. e., a link, functioning as a diode, is formed on the anti-fuse after the anti-fuse OTP nonvolatile memory cell is programmed.
所述集成电路包括具有二极管及与所述二极管连通的反熔丝的存储器单元。
Such integrated circuit includes a memory cell with a diode and an antifuse in communication with the diode.
应用推荐