对于金属导体引起的电场不规则畸变，采用有限元的方法计算场强以验证是否超出临界值。
And finite element method was adopted to calculate the electric field strength to find whether it is beyond the critical.
在垂直半导体元件上，由于制造工艺形成的不规则表面更增加元件的发光效益。
On a vertical semiconductor element, the light emitting benefit of the element is increased due to the irregular surface formed by a manufacture process.
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