本文研究了用热灯丝化学气相沉积方法在单晶硅衬底上制备金刚石薄膜时其成核密度与制备条件的关系。
In the present paper, the relation between diamond nucleation density and synthesis conditions is studied for the diamond thin film synthesized by hot filament chemical vapour deposition method.
采用国内研制的电子回旋共振化学气相沉积(ECRCVD)设备，在单晶硅衬底上沉积了金刚石薄膜。
Diamond thin films were successfully deposited on single - crystal si substrate at low pressure by a homemade equipment of electron cyclotron resonance chemical vapor deposition (ECRCVD).
以硅烷和氧化二氮作为反应气体，采用等离子体增强化学气相沉积(PECVD)技术，不使用掺杂，在单晶硅衬底上制备了用于平面光波导的二氧化硅薄膜。
Without doping, plasma enhanced chemical vapor deposition (PECVD) of silica films on si substrates with gas mixtures of SiH_4 and N_2O is considered.
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