本文从MOS管电容模型出发详细分析了MOS源漏自举电路的自举物理过程，认为其中负载管栅电容主要起耦合作用。
The processes of the bootstrapping from source and drain are analyzed in detail based on the capacitor model of MOSFET and it is pointed out that the gate capacitance mainly plays a part of coupling.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
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