The conception of electron trap and the process of free photoelectron trapping are introduced in detail.
详细介绍了电子陷阱的概念以及电子陷阱对自由光电子的束缚过程。
Mechanism of electron trapping optical storage and storage properties in different material was reviewed in detail. Some problems related with utilities were discussed.
着重介绍了电子俘获材料光存储机制，以及各种材料的存储特性，并探讨了存在的问题。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
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