Therefore, it is meaningful to improve the radiation effect of the HPM pulse radiation source and the IC's anti-interference ability by studying the damage effect to the electron device of the HPM pulse radiation source.
因此,研究高功率微波脉冲辐射源对电子器件的损伤作用,对于提高高功率微波脉冲辐射源的辐射效能和集成电路的抗干扰能力都具有十分重要的意义。
参考来源 - 集成电路HPM损伤的计算机模拟·2,447,543篇论文数据,部分数据来源于NoteExpress
Application of power electron device results in decreasing of natural power factor of electric power system.
电力电子装置的应用,使电力系统的自然功率因数下降。
And the materials, theories and manufacture techniques adopted by different semiconductor electron device are compared.
分别比较了不同的半导体电子器件的材料、理论和所采用的制备技术。
Firstly, we introduce the background of single-electron device the single-electron basic phenomenon, the orthodox theory.
本论文首先介绍了单电子器件的出现背景,介绍了单电子学的正统理论。
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