Electron - beam lithography with a novel multilevel resist structure defines the pattern.

采用新型的多层抗蚀剂结构的电子束光刻来形成图形。

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The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam.

在电子束曝光胶图形的三维显影模拟工作中，首次使用了最精确的三维线踪模型。

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