Plasma electron density was increased by using the method of gas fuelling with molecular beam injection in the HL 1m tokamak.
在HL - 1m装置上用分子束注入等离子体的气体加料方法提高了等离子体的电子密度。
In this simulation. the density ratio of beam electron and background electron is 0.125.
数值模拟的束流密度与背景电子密度之比为0.125。数值模拟的结果说明，两者相符较好。
High energy density electron beam is employed in surface rapid solidification on Ni plated ti alloy.
采用高能量密度电子束进行了钛镀镍合金表面熔凝处理的研究。
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