The MOSFET input diode is controlled by an electric field in the gate region, thus the input impedance is always extremely high because there is no forward biased diode to lower the input impedance.
MOSFET的输入二极管是由一个电场控制在门区，因此总是输入阻抗非常高，因为没有正向偏置二极管，以降低输入阻抗。
Cathode plasma moves ahead to the anode and changes diode effective gap. Plasma's expanding velocity is determined by electric field, density gradient and temperature gradient.
决定阴极等离子体膨胀速度的因素主要有二极管区的电场强度、等离子体的密度梯度和等离子体温度梯度等因素。
In this paper, the magnetic field's and the electric field's influence on the reflux of electron of high voltage vacuum diode is analyzed.
本文分析了磁场和电场对真空中高压二极管电子回流的影响。
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