This is why the single crystal pentacene based OTFT has higher field effect mobility than the polycrystalline device.
这也就解释了单晶otft器件具有比多晶器件更高的场效应迁移率的原因。
A series resistance not only decreases field-effect mobility but also reduces the gate voltage corresponding to the peak field-effect mobility.
串联电阻不仅会使迁移率降低,还会使峰值场效应迁移率所对应的栅压减小。
In addition, this model is involved in the velocity saturation effect, mobility degradation effect and channel length modulation effect.
模型中同时考虑了速度饱和效应、迁移率下降效应和沟道长度调制效应等。
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