Theresult clearly showed that plasma edge damage is imporan in submicron devices andthis effect can dramatically influence the hot-carrier reliability of the devices.
从测量结果中可以清楚的看到等离子体边缘损伤在亚微米MOS器件中是非常严重的,它严重影响了器件的热载流子可靠性。
参考来源 - 等离子体工艺引起的MOSFET栅氧化层损伤研究·2,447,543篇论文数据,部分数据来源于NoteExpress
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