...rmers with enhanced common mode rejection] 薄膜声耦合变压器(FACT)(200)具有第一(106)和第二(108) 去耦层叠体声谐振器(DSBAR)。每个DSBAR具有下部薄膜体声谐振器 (FBAR)(110)、在下部FBAR顶部的上部FBAR(120)和在它们之.
Theacousticimpedancesandthicknessesofthe acoustic decouplinglayersdetermine the acoustic impedance of the acoustic decoupler, and, hence, the pass bandwidth of the DSBAR device.