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The drift drain resistance model is derived from the free carrier concentration analyzing in the drift region.
以单位面积下漂移区自由载流子浓度为基础，得出漂移区电阻的解析模型。
The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
Principle and method for designing high voltage thin film SOI devices with linearly doped drift region are given.
给出了漂移区为线性掺杂的高压薄膜soi器件的设计原理和方法。
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