drain gate bias circuit 漏栅偏置电路
drain-gate 漏栅
drain gate voltage 漏栅电压
body drain-gate capacitor 漏栅电容
drain gate leakage current 漏栅漏电流
drain gate breakdown voltage 漏栅极击穿电压
drain material gate 出料闸门
Drain induced gate noise 栅极感应噪声电流
When the current applied by the gate is high enough, electrons flow through the channel between the source and drain electrodes.
当由栅极施加的电流足够强的时候，电子会在源极和栅极之间进行流动。
Source and drain regions in the semiconductor may define a transistor gate length.
在半导体中的源极区和漏极区可以限定晶体管栅极长度。
The floating gate is positioned between the source and drain regions.
浮动栅极定位于源极区与漏极区之间。
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