Gate to Drain Contact Spaces 栅极到漏极接触孔
drain contact to gate spacing 中漏接触孔到栅距离
source drain contact 源漏接触
The properties of the carrier transport in the regions of source, drain contact and channel are analyzed in detail.
详细地分析了源、漏电极接触区和沟通区内载流子的输运特性。
The channel resistance and the source-drain contact resistance of OTFT were investigated, and the results indicated that the latter is the main factor to affect the electric performances of OTFTs.
研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响,结果表明接触电阻是影响器件性能的主要因素。
Also, the added schottky diode can be easily realized by schottky contact in the drain of the NMOSFET, which does not add chip area.
且该电路结构中肖特基二级管可在NMOSFET漏极直接制作肖特基金半接触来方便地实现,工艺简明可行又无须增加芯片面积。
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