With the consideration of the drain bias on the impact of TDDB, we have optimized the anti-fuse structure, which improve the programming speed and data storage reliability.
针对漏极偏置对经时击穿的影响，对反熔丝结构做了优化，提高了编程速度和数据存储的可靠性。
The drain side bias circuit provides a drain side bias.
一漏极端偏压电路，用于提供一漏极端偏压；
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