drain gate bias circuit 漏栅偏置电路
drain gate 排泄门 ; 泄水门
drain gate voltage 漏栅电压
body drain-gate capacitor 漏栅电容
drain gate leakage current 漏栅漏电流
drain gate breakdown voltage 漏栅极击穿电压
drain material gate 出料闸门
Drain induced gate noise 栅极感应噪声电流
The transistor may include a gate structure, a source region, and a drain region.
晶体管包含一栅结构、一源区和一漏区。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure.
提供具有栅结构、和具有在所述栅结构相对两侧的源和漏的半导体衬底。
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