Based on thermal analysis,a novel CRAM cell structure with double GST was designed by inserting an extra GST layer between heater and bottom electrode of the typical cell.
基于热场分析,在CRAM存储元传统结构的加热层和底电极之间插入一层存储介质GST,设计出含双层GST的CRAM存储元结构。
参考来源 - 含双层GST的低功耗CRAM存储元结构设计·2,447,543篇论文数据,部分数据来源于NoteExpress
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