·2,447,543篇论文数据,部分数据来源于NoteExpress
But the fabrication of self aligned double gate MOSFET is too complicated.
但是目前自对准的双栅MOSFET的工艺制作相当困难。
This paper introduces the principle and the design of the double gate gate-ban system of defending to rob by tailing behind.
系统地介绍了适合小型银行储蓄所、现金柜台等重要金融场所防尾随抢劫双门门禁系统的原理与设计。
The analytical solutions to 1D Schrdinger equation (in depth direction) in double gate (DG) MOSFETs are derived to calculate electron density and threshold voltage.
推导了双栅MOSFET器件在深度方向上薛定谔方程的解析解以求得电子密度和阈电压。
应用推荐