The influence of doping elements in A site and B site and the doping ratio on the catalytic activity of perovskite-type oxides was also respectively discussed in this thesis.
并分别深入探讨了A位和B位掺杂元素、掺杂比例对催化活性中心离子的影响。
Phosphorus doping degenerates the crystalline ratio of deposited film but benefits recrystallization.
磷掺杂导致沉积时晶化率降低，但对固相晶化有利。
The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.
比较了外延生长参数，如生长温度、生长压强、碳硅比和气流流速，与生长率和净载流子浓度的影响关系。
应用推荐