As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used.
对于半导体材料，有利地可以使用铟合金，而对于掺杂材料，可以使用硒或碲。
The experimental results showed that Mn doping in small quantity was effective to improve the cycle stability and reversible capacity of the material.
实验结果表明，少量锰的掺杂能有效地提高材料的循环稳定性和可逆容量。
It is shown that doping design for the device's material structure has evolved into band engineering design.
这种差异表明，在器件的材料结构设计上已从掺杂设计步入到了能带工程设计。
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