The doped semiconductor line is coupled to a row of memory cells.
掺杂半导体线连接至一行存储单元。
Finally, the possibility for using doped semiconductor and nanometer material to achieve infrared and rada.
最后介绍了用掺杂半导体材料和纳米材料实现红外与雷达复合隐身的可能性。
The optical storage medium according to the invention USES a mask layer (2) as a super resolution near field structure, which comprises a doped semiconductor material.
根据本发明的光学存储介质使用作为超分辨率近场结构的掩模层(2)，该掩模层(2)包括掺杂半导体材料。
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