The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper.
着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。
The RTP temperature, the RTP time, the cooling rate, the ambient and the dopant atoms influenced the density and distribution of point defects in wafers, and then affected oxygen precipitates.
快速热处理温度、时间、降温速度、退火气氛、掺杂原子等都对硅片中点缺陷的形成及分布产生影响，进而影响氧沉淀的形成。
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