The influence of thermal annealing on DKDP crystals grown at different rates was studied.
分别对不同生长速度的DK DP 晶体进行了退火处理。
The growth mechanism of DKDP crystal was described by the formation, diffusion and adsorption of growth unit of DKDP crystal. The method of increasing the growth rate was discussed.
从DKDP晶体生长基元的形成、扩散、吸附等方面研究了DKDP晶体生长的微观机制，提出了提高晶体生长速度的具体方法。
The growing solution of DKDP crystal was synthesized firstly, then the source and possible introducing method of impurities were discussed by the measurement of metal ion impurity concentrations.
首先合成了DKDP晶体生长溶液，测定了合成溶液中部分杂质金属离子的含量，讨论了晶体生长溶液中杂质的可能来源和引入途径。
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