Therefore, the direct tunneling currents, instead of the hot-electron injection and Fowler-Nordheim tunneling ones, turn out to be the most important factor to determine the reliability of the devices.
因而直接隧穿电流将代替热电子发射电流和Fowler-Nordheim隧穿电流成为影响器件可靠性的重要因素。
参考来源 - 纳米MOS器件中直接隧穿过程的研究·2,447,543篇论文数据，部分数据来源于NoteExpress
With the rapid scaling down of MOS devices, the direct tunneling current becomes the main factor for MOS device reliability instead of FN tunneling.
随着器件尺寸的迅速减小，直接隧穿电流将代替FN电流而成为影响器件可靠性的主要因素。
The MOSFET gate currents of high k gate dielectrics due to direct tunneling are investigated by using a new direct tunneling current model developed.
提出了包括有限势垒高度下反型层量子化效应以及多晶硅耗尽效应在内的直接隧穿电流模型。
The upper metal nanocrystals as an additional charge trap layer enable the direct tunneling mechanism to enhance the flat voltage shift and prolong the retention time.
说明顶层的金属纳米晶作为一层额外的电荷俘获层可以通过直接隧穿机制进一步延长保留时间和提高平带电压漂移量。
应用推荐