The information carrier of traditional electronic components such as diode and audion, is electronic charge, but the electronic spin is not considered.
传统的电子元件，比如二极管和三极管，它们的信息载体都是电子电荷，电子的自旋没有被利用。
Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.
在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下，推导了双漂移崩越二极管的渡越角表达式。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
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