The effects of hydrogen concentration and other impurities on the hydrogen diffusion coefficient were also discussed.
最后讨论了氢浓度和其它杂质对氢的扩散系数的影响。
The diffusion of the impurities in the light doped region can be reduced in the process of forming the side wall.
可减少轻掺杂区中的杂质在形成侧墙的过程中发生扩散。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
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