The dielectric and interface characteristics of STO with a metal insulator semiconductor (MIS) structure were investigated.
研究了STO薄膜金属绝缘体半导体(MIS)结构的介电和界面特性。
The interface optical (IO) phonon modes in double barrier structures of polar semiconductor are studied with the macroscopic dielectric continuum model.
采用宏观连续介质模型研究了极性半导体双势垒结构中界面光学声子模。
The at least one non-semiconductor monolayer may be positioned at depth of about 4-100 monolayers relative to the interface between the channel and the gate dielectric.
所述至少一个非半导体单层被定位于相对于所述沟道和所述栅极电介质之间的界面大约4 - 100个单层的深度处。
应用推荐