The effect of Ge doped in CZSi on the precipitation and the defect-free zone (DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.

运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。

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The effect of Ge doped in CZSi on the precipitation and the defect-free zone( DFZ) formation in Ge-doped CZSi wafers after a three step gettering annealing was studied.

运用高温-低温-高温三步退火的本征吸除工艺研究了锗的存在对硅片清洁区形成的影响。

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Synchronized analyses on the process of crack propagation and the lattice plane distortion changing in the DFZ were carried out by using the in situ technique under TEM-SAD.

通过TEM—SAD同步原位分析，给出了裂纹扩展和DF Z内晶面畸变的对应过程，通过分析衍射斑点的变化，确定出晶面的畸变有压缩、倾转和局部弯曲等形式。

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